s mhop microelectronics c orp. a stu10n20 std10n20 symbol v ds v gs i dm a i d units parameter 200 v v 20 gate-source voltage drain-source voltage features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to-251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous -pulsed ac a ver 1.0 www.samhop.com.tw aug,14,2014 1 details are subject to change without notice. t c =25 c g g s s d d g g s s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) s t d s e ri e s to - 2 5 1 ( i - p a k ) w p d c -55 to 150 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 2.5 c/w thermal resistance, junction-to-case r jc t c =70 c a t c =70 c w 8 23 50 green product 6.4 32 product summary v dss i d r ds(on) (m ) typ 200v 8a 328 @ vgs=4.5v 306 @ vgs=10v c e as mj single pulse avalanche energy d 16
symbol min typ max units bv dss 200 v 1 i gss 100 na v gs(th) v 306 g fs s c iss 1040 pf c oss 63 pf c rss 30 pf q g 20 nc 15.5 28 10 t d(on) 15 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =100v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =4a v ds =10v , i d =4a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =160v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =10ma reverse transfer capacitance on characteristics 370 b f=1.0mhz b stu10n20 std10n20 ver 1.0 www.samhop.com.tw aug,14,2014 2 v sd nc q gs nc q gd 2.2 4 gate-drain charge gate-source charge diode forward voltage v ds =100v,i d =1a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =4a 0.81 1.3 v notes v ds =100v,i d =1a,v gs =10v 12 3 11 328 mohm v gs =4.5v , i d =3.9a 430 nc 7.7 v ds =100v,i d =1a,v gs =4.5v a.pulse test:pulse width < 10us, duty cycle < 1%. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. d.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) e.mounted on fr4 board of 1 inch 2 ,2oz. _ _
stu10n20 std10n20 ver 1.0 www.samhop.com.tw aug,14,2014 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature 15 9 6 0 0 2 4 6 8 10 12 v gs =10v 8.0 6.4 4.8 3.2 1.6 0 0 1 6 5 4 3 2 tj=125 c -55 c 25 c 900 750 600 450 300 150 2.5 2.2 1.9 1.6 1.3 1.0 0 100 75 25 50 125 150 v gs =10v i d =4a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.3 1.2 1.1 1.0 0.9 0.8 0.7 125 150 100 75 50 25 0 -25 -50 i d =10ma 3 v gs =10v 0.1 3 6 912 15 0 12 v gs =4.5v v gs =4.5v i d =3.9a v gs =4v 0 v gs =3.5v v gs =4.5v
stu10n20 std10n20 ver 1.0 www.samhop.com.tw aug,14,2014 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 110 100 1 10 100 1000 vds=100v,id=1a vgs=10v td(on) tr td(off ) tf 0.1 1 10 100 0.1 10 600 400 200 10 0 125 c 75 c 25 c i d =4a 20.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 25 c ciss coss crss 1500 1250 1000 750 500 250 0 10 15 20 0 5 25 30 10 8 6 4 2 0 1 100 v ds =100v i d =1a 8 6 4 2 75 c 0 1200 1000 800 125 c v gs =10v single pulse t c =25 c dc 1m s 1 0 ms r d s ( on) l i mit 100u s 0 3 6 912 15 18
stu10n20 std10n20 ver 1.0 www.samhop.com.tw aug,14,2014 5 t p i as figure 13a. uncamped inductive test circuit unclamped inductive waveforms r g i as 0.01 t p d.u.t l v ds + - 20v v dd figure 13b. v (br)dss normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j jc (t)=r (t) * r j jc 2. r j jc =s ee datas heet 3. t jm- t c =p dm *r j jc (t) 4. duty cycle, d=t 1 /t 2 single pulse 1
ver 1.0 www.samhop.com.tw aug,14,2014 6 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067 stu10n20 std10n20
www.samhop.com.tw 7 package outline dimensions to-251 b3 d e d1 12 3 l4 e l5 h b4 b2 b e1 a c2 l c symbol millimeters inches min max min max e 6.400 6.731 l 3.980 4.280 l4 0.698 ref l5 0.972 1.226 6.000 d 6.223 h 11.050 11.450 b 0.640 0.880 b2 0.770 1.140 5.210 b3 5.460 b4 0.450 0.550 e 2.286 bsc a 2.200 2.380 c 0.400 0.600 0.400 0.600 c2 d1 5.100 e1 4.400 0.252 0.265 0.157 0.169 0.027 ref 0.038 0.048 0.236 0.245 0.435 0.450 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.022 0.090 bsc 0.087 0.094 0.016 0.024 0.016 0.024 0.201 0.173 ver 1.0 aug,14,2014 stu10n20 std10n20
ver 1.0 www.samhop.com.tw aug,14,2014 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 -0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 "a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h stu10n20 std10n20
www.samhop.com.tw 9 top marking definition to-252 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) stu10n20 smc internal code no. (a,b,c...z) ver 1.0 stu10n20 std10n20 aug,14,2014
www.samhop.com.tw 10 top marking definition to-251 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) std10n20 smc internal code no. (a,b,c...z) ver 1.0 aug,14,2014 stu10n20 std10n20
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